smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SD780 features micro package. high dc current gain. h fe: 200typ.(v ce =1.0v,i c =50ma). h fe classification marking dw1 dw2 dw3 dw4 dw5 hfe 110 180 135 220 170 270 200 320 250 400 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5.0 v collector current i c 300 ma total power dissipation at 25 ambient temperature p t 200 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =50v,i e = 0 100 na emitter cutoff current i ebo v eb =5.0v,i c = 0 100 na dc current gain * h fe v ce =1.0v,i c = 50 ma 110 200 400 base to emitter voltage * v be v ce =6.0v,i c = 10 ma 600 645 700 mv collector saturation voltage * v ce(sat) i c = 300 ma, i b = 30 ma 0.15 0.6 v output capacitance c ob v cb =6.0v,i e = 0 , f = 1.0 mhz 7.0 pf gain bandwidth product f t v ce =6.0v,i e = -10 ma 140 mhz * pulsed: pw 350 s, duty cycle 2% sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification 4008-318-123
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